At launch, Hudson Hi-Tech will prioritize the high-volume, high-impact substrates required for today’s core semiconductor, power, and communications markets. These Phase 1 products are being developed for scalable manufacturing in our planned New York facility.
High-purity, precision-engineered monocrystalline silicon wafers will be manufactured to meet stringent cleanroom and semiconductor fabrication standards. These wafers will offer exceptional uniformity, low defect density, and excellent thermal stability—ideal for ICs, sensors, MEMS, and advanced electronic devices.
High-Voltage, High-Efficiency Material for Power Devices
Hudson Hi-Tech is planning SiC wafer production to support high-temperature, high-voltage, and high-efficiency power device applications. These wafers are being developed for exceptional thermal conductivity and switching performance, crucial for electric mobility, energy infrastructure, and industrial power electronics. As global demand for power semiconductors grows, SiC remains one of the most future-ready materials in our roadmap.
Beyond Phase 1 production, Hudson Hi-Tech is building a structured R&D pipeline around compound semiconductors and emerging materials. These platforms are the focus of ongoing development, prototyping, and collaboration with research and industry partners, with the goal of enabling next-generation devices over time.
High-Purity Substrates for Infrared, Optoelectronic & Power Applications
Germanium wafers are being developed as high-purity substrates with exceptional carrier mobility and infrared transparency, making them well suited for high-performance photodetectors, solar cells, and advanced optoelectronic devices. Their uniform crystalline structure supports superior signal sensitivity and efficient energy capture, positioning germanium as a strategic material for next-generation sensing and communication technologies.
Wide-Bandgap Platform for Fast, Compact Power Systems
Hudson Hi-Tech’s GaN wafer roadmap focuses on substrates that enable ultra-fast, high-efficiency power conversion in compact form factors. These materials are being targeted for RF systems, power electronics, fast chargers, and communication hardware. As demand for energy-efficient electronics continues to rise, GaN is expected to complement silicon and SiC by delivering superior performance-per-watt in advanced designs.
Premium III–V Substrates for High-Speed Photonics & Telecom Devices
Indium phosphide wafers form part of Hudson Hi-Tech’s future portfolio for ultra-high-frequency electronic and photonic applications, including 5G/6G systems, high-speed lasers, and advanced communication hardware. With excellent electron mobility and direct bandgap properties, InP enables low-loss transmission, efficient light emission, and exceptional performance in leading-edge optoelectronic components.
Specialized III–V Materials for Infrared & High-Mobility Applications
These advanced compounds are currently positioned within Hudson Hi-Tech’s R&D roadmap for infrared sensors, photonics, and high-mobility semiconductor devices. Their unique bandgap properties unlock performance in extreme or niche environments. Adoption of these materials is expanding in aerospace, defense, and precision optical systems, and Hudson Hi-Tech aims to support this growth through targeted development and collaboration.
High-Mobility Substrates for RF, Aerospace & High-Efficiency Solar
GaAs wafers are being explored as high-mobility substrates offering excellent electron transport and high-temperature stability. They are suited for RF amplifiers, satellite communication systems, and multi-junction solar cells. Their direct bandgap and low noise characteristics support the high-power, high-frequency performance required in advanced aerospace, defense, and energy-efficient electronic technologies.
Ultra-High Mobility Platform for Next-Generation Nanoelectronics
Graphene materials in Hudson Hi-Tech’s roadmap are focused on exceptional electrical mobility, mechanical strength, and thermal performance. These platforms are intended for nanoelectronics, sensors, advanced composites, and transparent conductive devices. As global research accelerates, graphene is expected to remain a key enabler for next-generation high-speed and flexible electronics.
Sustainable Semiconductor Material for Emerging Green Technologies
Pyrite wafers are being evaluated as a cost-effective, earth-abundant platform for sustainable semiconductor applications. Their optical absorption and material availability make them promising candidates for photovoltaics and experimental electronics. With rising interest in green technologies, pyrite is under consideration as a pathway toward scalable clean-energy devices.
Hudson Hi-Tech is designing technical and manufacturing services to support end-to-end wafer processing with precision, consistency, and scalability. As the facility becomes operational, these processes will strengthen material quality and prepare wafers for high-performance semiconductor applications.
Acid Coating & Dipping for Defect-Ready Wafer Surfaces
Hudson Hi-Tech plans to implement surface-treatment processes—combining precision acid coating and controlled dipping—to prepare wafers for high-yield fabrication. These treatments are designed to ensure uniform cleaning, controlled etching, and enhanced surface adhesion for subsequent process layers. This step will be essential for reducing defects, improving consistency, and achieving stable downstream device performance.
Deposition Techniques for Consistent Thin-Film Layering
Advanced deposition methods will be used to form ultra-uniform thin films essential for device architecture. These controlled layers will enable the electrical, optical, and structural performance required in semiconductor manufacturing. With high repeatability and precision, Hudson Hi-Tech’s planned deposition services are intended to support scalable production across multiple device types.
Compounding & Doping for Customized Material Properties
Through specialized compounding and atomic-level doping, Hudson Hi-Tech aims to tailor material compositions to meet precise electrical and performance specifications. These processes will modify conductivity, carrier concentration, and other critical parameters required for advanced semiconductor applications, enabling engineered material behavior optimized for both high-performance and emerging device technologies.
High-Accuracy Surface Planarization for Wafer Uniformity
Planned precision lapping services will deliver exceptionally flat, smooth wafer surfaces essential for tight-tolerance manufacturing. By removing micro-level variations, lapping will enhance structural stability and prepare wafers for further polishing or deposition steps. This will help ensure consistent device fabrication with improved efficiency and long-term reliability.
From AI to aerospace, Hudson Hi-Tech’s planned precision wafer substrates are being designed to support breakthrough innovations across critical industries. Target applications include autonomous vehicles, data-center AI accelerators, and defense-grade communication systems—all of which rely on high-performance semiconductor foundations. As the facility comes online, Hudson Hi-Tech aims to serve the technology ecosystems that power modern infrastructure and intelligent systems.
Mission-critical semiconductor components for radar systems, satellite communications, guidance platforms, and defense electronics.
High-frequency substrates enabling 5G infrastructure, base stations, network equipment, and communications backbone connectivity.
Precision substrates for diagnostic equipment, medical imaging systems, patient monitoring, and future implantable electronics.
Photovoltaic-grade and advanced materials supporting solar cell manufacturing, renewable energy conversion, and sustainable power solutions.
Sensor arrays, smart home devices, industrial IoT systems, and connected infrastructure transforming modern environments.
High-performance substrates for server processors, accelerators, memory chips, storage systems, and data center infrastructure.
Hudson Hi-Tech manufactures premium silicon wafers for the semiconductor industry. American made. CHIPS Act backed. Future ready.
No 60 Skillman Avenue.
Apartment no 505, Jersey City 07306